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| (R) STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS K IF(AV) VRRM IRM (typ.) Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s 8A 300 V 4A 175 C 1.3 V 30 ns K A TO-220AC STTH8R03D s s Designed for high frequency applications. Hyperfast recovery competes with GaAs devices. Allows size decrease of snubbers and heatsinks. K DESCRIPTION The TURBOSWITCH "R" is an ultra high performance diode. This TURBOSWITCH family, which drastically cuts losses in associated MOSFET when run at high dIF/dt, is suited for HF OFF-Line SMPS and DC/DC converters. NC A D2PAK STTH8R03G ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 140C = 0.5 tp = 10 ms sinusoidal Value 300 20 8 80 - 65 + 175 + 175 Unit V A A A C C February 2001 - Ed: 1H 1/6 STTH8R03G/D THERMAL AND POWER DATA Symbol Rth (j-c) Junction to case Parameter Value 2.5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = VRRM Tj = 25C Tj = 125C IF = 8 A Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.9 x IF(AV) + 0.05 IF2(RMS) 1.05 15 Min. Typ. Max. 10 100 1.8 1.3 V Unit A VF ** RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A Tests conditions Irr = 0.25 A IR = 1A Tj = 25C Min. Typ. 13 30 Tj = 125C 4 0.4 5.5 A Max. Unit ns IF = 1 A dIF/dt = - 50 A/s VR = 30V IRM S factor VR = 200 V IF = 8A dIF/dt = - 200A/s TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Tests conditions Tj = 25C IF = 8A dIF/dt = 100A/s measured at 1.1xVFmax Tj = 25C IF = 8A dIF/dt = 100A/s Min. Typ. Max. 200 3.5 Unit ns V 2/6 STTH8R03G/D Fig. 1: Conduction losses versus average current Fig. 2: Forward voltage drop versus forward current. IFM(A) = 0.05 = 0.1 = 0.2 = 0.5 P(W) 15.0 12.5 10.0 7.5 5.0 T 100 Tj=125C Maximum values =1 Tj=125C Typical values 10 Tj=25C Maximum values 2.5 IF(av) (A) 0.0 0 2 4 6 =tp/T tp VFM(V) 8 10 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 Single pulse = 0.5 IRM(A) 10 VR=200V Tj=125C IF= 2 x IF(av) IF=IF(av) 8 6 4 T = 0.2 = 0.1 IF= 0.5 x IF(av) 2 tp(s) =tp/T tp dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 0.0 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). trr(ns) 80 70 60 50 40 30 20 10 0 0 IF=0.5 x IF(av) IF=2 x IF(av) IF=IF(av) VR=200V Tj=125C Qrr(nC) 140 120 100 80 60 40 IF=0.5 x IF(av) VR=200V Tj=125C IF=2 x IF(av) IF=IF(av) dIF/dt(A/s) 50 100 150 200 250 300 350 400 450 500 20 0 0 50 dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 3/6 STTH8R03G/D Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). Fig. 8: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125C). S factor 0.6 0.5 0.4 0.3 0.2 0.1 dIF/dt(A/s) 0.0 0 50 IF < 2 x IF(av) VR=200V Tj=125C 100 150 200 250 300 350 400 450 500 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 S factor IRM Tj(C) 50 75 100 125 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 300 VFR=1.1 x VF max. IF=IF(av) Tj=125C VFP(V) 10 9 8 7 6 5 4 3 2 1 0 IF=IF(av) Tj=125C 250 200 150 100 50 dIF/dt(A/s) dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m)(D2PAK) Rth(j-a) (C/W) 80 DPAK 70 60 50 40 30 20 10 0 0 5 10 15 S(cm) 20 25 30 35 40 4/6 STTH8R03G/D PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 1.30 5.08 3.70 8.90 5/6 STTH8R03G/D PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. H2 C L5 OI L6 L2 D L7 A Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 14.00 2.95 15.75 6.60 3.93 3.85 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 13.00 2.65 15.25 6.20 3.50 3.75 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 0.551 0.116 0.620 0.259 0.154 0.151 A C D E F F1 G H2 L2 L4 L9 F1 L4 16.40 typ. 0.645 typ. F G M E L5 L6 L7 L9 M Diam. I 2.6 typ. 0.102 typ. s s s s Ordering code Marking Package STTH8R03D STTH8R03D TO-220AC STTH8R03G STTH8R03G D2PAK STTH8R03G-TR STTH8R03G D2PAK Cooling method: by conduction (C) Recommended torque value (TO-220AC): 0.55 N.m. Maximum torque value (TO-220AC): 0.7 N.m. Epoxy meets UL 94,V0 Weight 1.86g 1.48g 1.48g Base qty 50 50 1000 Delivery mode Tube Tube Tape & Reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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